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| APTDC30H601G SiC Diode Full Bridge Power Module 3 CR1 5 6 CR2 CR4 * * * Benefits * * * * * * * All multiple inputs and outputs must be shorted together 3/4 ; 5/6 ; 7/8 ; 1/2 ; 9/10 Outstanding performance at high frequency operation Low losses Low noise switching Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low stray inductance High level of integration VRRM = 600V IF = 30A @ Tc = 80C 4 CR3 1 2 Application * * * * Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers Features 7 8 9 10 Absolute maximum ratings Symbol VR VRRM IF(AV) IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% Non-Repetitive Forward Surge Current 10 s Max ratings 600 TC = 80C TC = 25C 30 370 Unit V A APTDC30H601G - Rev 0 February, 2009 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-3 APTDC30H601G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic VF IRM QC C Diode Forward Voltage Maximum Reverse Leakage Current Total Capacitive Charge Total Capacitance Test Conditions Tj = 25C IF = 30A Tj = 175C Tj = 25C VR = 600V Tj = 175C IF = 30A, VR = 300V di/dt = 1000A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V Min Typ 1.6 2 150 300 42 195 150 Max 1.8 2.4 600 3000 Unit V A nC pF Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min 2500 -40 -40 -40 2.5 Typ Max 1 175 125 100 4.7 80 Unit C/W V C N.m g Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 2-3 APTDC30H601G - Rev 0 February, 2009 APTDC30H601G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.2 Thermal Impedance (C/W) 1 0.8 0.6 0.4 0.2 0.9 0.7 0.5 0.3 0.1 0.05 0 0.00001 0.0001 0.001 Single Pulse 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Characteristics Reverse Characteristics 600 TJ=25C TJ=175C 60 IF Forward Current (A) IR Reverse Current (A) 50 40 30 TJ=125C TJ=75C TJ=175C 500 400 300 200 100 0 200 TJ=125C TJ=75C 20 10 0 0 0.5 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) Capacitance vs.Reverse Voltage TJ=25C 300 400 500 600 700 VR Reverse Voltage (V) 800 1200 C, Capacitance (pF) 1000 800 600 400 200 0 1 10 100 VR Reverse Voltage 1000 APTDC30H601G - Rev 0 February, 2009 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 3-3 |
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